吴远鹏助理教授于2025年加入北京大学深圳研究生院，主要从事微纳半导体材料及器件研究，在该领域具有12年的研究经验，以第一作者或通讯作者身份在PNAS (两篇), Light: Science & Applications, Nano Letters (两篇)，Progress in Quantum Electronics，Advanced Electronic Materials, ACS Photonics, IEEE Electron Device Letters, Applied Physics Letters等一流学术期刊发表论文18篇，研究成果为氮化物基异质结构合成和新型器件制备提供了重要的理论基础，个人总引用次数超过2000次，荣获国家优秀自费留学生奖学金，入选2024年国家高层次青年人才计划。

微电子和光电器件（硕士研究生、博士研究生、博士后）：电子与计算机工程、材料工程、光学工程及相关专业。

导师研究领域

宽禁带半导体材料及器件

GaN基微纳结构及器件

半导体微纳电子及光电器件

2025年5月至今，炸金花-炸金花在线游戏平台 ，助理教授，博士生导师

2023年1月至2025年4月，美国密歇根大学安娜堡分校，助理研究员

2020年6月至2022年12月，美国密歇根大学安娜堡分校，博士后

2016年9月至2020年6月，美国密歇根大学安娜堡分校电子与计算机工程炸金花 ，博士

2012年9月至2015年7月，浙江大学光电科学与工程炸金花 ，硕士

2008年9月至2012年7月，山西大学物理电子工程炸金花 ，本科

1. W. Lee^†,Y. Wu^†, M. Florian, Z. Mi, M. Kira, E. Kioupakis, Charge-transfer excitons in coupled atomically thin polar nitride quantum wells.Nano Lett., 25, 8 (2025)

2.Y. Wu^†,*, Y. Xiao^†, Y. Zhao^†, Y. Shen^†, K. Sun, B. Wang, P. Wang, D. Wang, P. Zhou, T. Norris^*, J. Song^*, and Z. Mi^*, Van der Waals Quantum Dots on Layered Hexagonal Boron Nitride.Proc. Nat. Acad. Sci. U.S.A., 122, e2417859122 (2025).

3. M. Tanim, S. Mondal,Y. Wu*, D. Wang, G. E. Baucom, Y. Shen, H. Kim, T. B. Norris, and Z. Mi*, Nitrogen-polar GaN quantum dots with tunable emission in the ultraviolet-A, B, and C bands, Appl. Phys. Lett., 125, 204005 (2024).

4. Y. Xiao^†,Y. Wu^†, M. Reddeppa^†, Y. Malhotra, Y. Guo, S. Yang, J. Liu, A. Pandey, J. Min, K. Sun, Z. Mi^*, Spectrally Pure, High Operational Dynamic Range, Deep Red Micro-LEDs,Nano Lett., 24, 12900. (2024).

5.Y. Wu^*, Y. Xiao, K. Sun, J. Xiao, B. Tian, D. Wang, D. Wang, and Z Mi^*, A Tunneling Light-Emitting Device with Ultra-Narrow Linewidth Emission at Room-Temperature,IEEE Electron Device Lett., 45, 11 (2024).

6.Y. Wu^*, Z. Mi, Topological Dirac-vortex microcavity laser for robust on-chip optoelectronics,Light Sci. Appl., 13, 1 (2024).

7. Y. Malhotra^†, Y. Shen^†,Y. Wu^†,*, J. Hanish, Y. Guo, Y. Xiao, K. Sun, T. Norris^*, and Z. Mi^*, The Impact of Charge Carrier Transfer and Strain Relaxation on Red-Emitting InGaN/GaN Heterostructures,ACS Photonics, 10, 4385 (2023).

8.Y. Wu^†, P. Zhou^†, Y. Xiao^†, K. Sun, D. Wang, P. Wang and Z. Mi^*, Achieving Atomically Ordered GaN/AlN Quantum Heterostructures: The Role of Surface Polarity.Proc. Nat. Acad. Sci. U.S.A., 120, e2303473120 (2023).

9.Y. Wu^*, P. Wang, W. Lee, A. Aiello, P. Deotare, T. Norris, P. Bhattacharya, M. Kira^*, E. Kioupakis^*, Z. Mi^*, Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications,Appl. Phys. Lett., 122, 160501 (2023).

10. D. Laleyan^†, W. Lee^†, Y. Zhao^†,Y. Wu^†, P. Wang, J. Song^*, E. Kioupakis^*, Z. Mi^*, Epitaxial hexagonal boron nitride with high quantum efficiency,APL Mater., 11, 051103 (2023).

11.Y. Wu, Y. Xiao, I. Navid, K. Sun, Y. Malhotra, P. Wang, D. Wang, Y. Xu, A. Pandey, R. Maddaka, W. Shin, J. Liu, J. Min, and Z Mi^*, InGaN Micro-light-emitting Diodes Monolithically Grown on Si: Achieving Ultra-stable Operation through Polarization and Strain Engineering,Light Sci. Appl., 11, 294 (2022).

12.Y. Wu^†, X. Liu^†, A. Pandey, P. Zhou, W. J. Dong, P. Wang, P. Deotare, M. Kira, E. Kioupakis, and Z. Mi^*, III-Nitride Nanostructures: Emerging Applications for Micro-LEDs, Ultraviolet Photonics, Quantum Optoelectronics, and Artificial Photosynthesis,Prog. Quant. Electron., 85, 100401(2022).‬‬

13.Y. Wu, D. A. Laleyan, C. Ahn, A. F. Aiello, A. Pandey, X. Liu, P. Wang, E. Ahmadi, Y. Sun, M. Kira, P. K. Bhattacharya, Z. Mi^*, Controlling Defect Formation of Nanoscale AlN: Towards Efficient Current Conduction of Ultrawide-Bandgap Semiconductors.Adv. Electron. Mater., 6, 2000337 (2020).

14.Y. Wu, X. Liu, P. Wang, D. A. Laleyan, K. Sun, Y. Sun, C. Ahn, M. Kira, E. Kioupakis, and Z. Mi^*, Monolayer GaN excitonic deep ultraviolet light emitting diodes.Appl. Phys. Lett., 116, 013101 (2020).

15.Y. Wu, Y. Wang, K. Sun, Z. Mi^*. Molecular Beam Epitaxy and Characterization of AlGaN Nanowire Ultraviolet Light Emitting Diodes on Al Coated Si (001) Substrate.J. Cryst. Growth, 507, 65 (2018)

16.Y. Wu, Y. Wang, K. Sun, A. Aiello, P. Bhattacharya and Z. Mi^*, Molecular beam epitaxy and characterization of Mg-doped GaN epilayers grown on Si (001) substrate through controlled nanowire coalescence.J. Cryst. Growth, 498, 109 (2018).

17.Y. Wu, T. Hasan, X. Li, P. Xu, Y. Wang, X. Shen, X. Liu and Q. Yang^*. High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes.Appl. Phys. Lett., 106, 051108 (2015).

18. Q. Yang^†,*,Y. Wu^†, Y. Liu^†, C. Pan and Z. L. Wang^*, The features of piezo-phototronic effect on optoelectronic devices based on wurtzite semiconductor nanowires.Phys. Chem. Chem. Phys., 16, 2790 (2014).